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Whitepaper Power Electronics

All our white papers are available for download

PDF - 2 MB
Versatile and efficient semi-conductor power amplifier architecture
Transistor-based power amplifiers used in particle accelerators require high power outputs. Due to the limited power output of a single transistor, the target application requires numerous transistors to be combined. The market also requires amplifier systems with different frequencies and power classes. We have therefore developed the TruAccelerate platform to establish this with a similar system architecture.
PDF - 3 MB
Solid-state power amplifier system for particle accelerators with unique hot-swap function that withstands full back radiation
In this white paper, we present a hot-swap technology that enables individual failed power amplifier modules to be replaced during operation under ambitious reflection requirements. Particular attention must be paid to the architecture of the combiner and the controlled isolation of the modules.
PDF - 3 MB
Meantime between failures (MTBF) and annual failure rate (AFR) for a large installation of solid state power amplifiers
The availability of particle accelerators is a deciding factor. Due to the complex technology, an accurate availability assessment must include the identification of individual errors and a reliable estimate of the failure rate.
PDF - 715 KB
It depends on the form: bipolar sputtering
Two characteristics of bipolar power supplies are presented in this article: (i) a wide pulse frequency range of up to 100 kHz and (ii) an additional brake time between the positive and negative half-wave of the square wave shape of electricity and voltage.
PDF - 941 KB
Sine or square wave
Since the introduction of dual magnetron sputtering (DMS) for highly insulating layers, it is possible to choose between a square wave pulse and sine wave power supply.
PDF - 567 KB
Auto Frequency Tuning
A countermeasure against rapid fluctuations in the plasma's impedance range is automatic frequency tuning, during which the RF generator sets its fundamental oscillation to a frequency value with better adaptation within a time frame of less than one millisecond.
PDF - 2 MB
New pulsed DC technology
Direct current and pulsed direct current sputtering are some of the most frequently used sputtering techniques in the industrial sector. The introduction of pulsed direct current technology facilitated the mass production of coatings made of non-conductive compounds created by reactive magnetron sputtering.
PDF - 1 MB
Voltage controlled transition mode
Reactive sputtering is a largely successful method used in modern industry to create insulating coatings and hard coatings. In comparison with evaporation, sputtering offers the benefits of the ion-assisted coating, which makes it attractive for the industry despite considerable system and electricity costs.
PDF - 2 MB
Arc management
The creation of arcs during MF magnetron sputtering: A well-known problem during reactive magnetron sputtering is the arc formation at the cathodes.
PDF - 864 KB
LDMOS
This paper explores the effects of performance combining structures on the RF and thermal performance of RF high-power amplifiers under incongruent conditions. 
PDF - 425 KB
HiPIMS - new possibilities for the industry
High Power Impulse Magnetron Sputtering (HIPIMS) is the latest PVD process (Physical Vapor Deposition) available to the industry.
PDF - 1 MB
PEALD technology, radio frequency signal generator and matching networks
Atomic Layer Deposition (ALD) is a process during which a number of thin layer materials are deposited from a vapor phase. A very thin film is built up out of atomic layers in several coating cycles.
PDF - 3 MB
Application of pulsed DC sputtering
One of the most interesting resorption materials for solar cells are copper-indium-selenide (CIS) based materials whose properties can be changed by replacing a part of the indium with gallium to make Cu(In,Ga)Se2, known as CIGS.
PDF - 2 MB
Precision in processing
Continuous improvements to the semiconductor production process are required to ensure a continuous reduction in size. This in turn requires TF generators that have an ever-higher signal quality in relation to output power and time resolution.
PDF - 712 KB
DC power for resistance heating in precise MOCVD processes
Metal Organic Chemical Vapor Phase Deposition (MOCVD) is a highly complex procedure for the growth of crystalline layers. MOCVD is implemented for the manufacture of light emitting diodes (LEDs), lasers, transistors, solar cells and other electronic and opto-electronic components, for example, and is the key technology for future markets with high growth potential. TruHeat DC 3000 is the perfect candidate for these applications.
PDF - 1 MB
Inductive heating - applications and challenges for the semiconductor industry
TRUMPF Hüttinger offers a wide range of process power supply systems, outer circles, inductors and accessories which are already being used successfully for crystal growing and epitaxy processes by a variety of key players in the SiC and GaN industry.
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New voltage regulation for C&I stores that enable a seamless transition between power connection and isolated operation
In addition to a battery storage system, it can also be locally operated, and generate and operate local networks offering the user decisive advantages including increased resilience, a sturdy design, and security. This especially includes the seamless continued operation of the system in the event of a supply network failure.
PDF - 1 MB
DC Coupling: the efficient path
Thanks to the decreasing costs of energy storage, PV-coupled storage applications are becoming increasingly attractive for a wide range of applications.
PDF - 343 KB
Single-level three-point inverter
The cost and energy efficiency of AC-coupled battery systems for high voltages depends on the performance electronics required for connecting the battery to the power supply system. This article discusses the requirements and dependencies for a single-level approach which can save costs and increase system efficiency.
PDF - 1 MB
High efficiency and innovative GaN generator in the 2.45-GHz-ISM band for high-tech microwave applications
To date, the main obstacle and greatest disadvantage in the industrialization of microwave processes has been the lack of "options". Up to now, only mechanically mobile components such as rotating plates, agitators, etc. were available to influence the homogeneity of the heating process and to facilitate a targeted temperature distribution and a reproducible heating process.
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