Country/region and language selection
Search
Contact
United Kingdom | EN
To MyTRUMPF
United Kingdom | EN
Contact
To MyTRUMPF

Whitepaper Power Electronics

All our white papers are available for download

PDF - 2 MB
Versatile and efficient semi-conductor power amplifier architecture
Transistor-based power amplifiers for use in particle accelerators require high power levels. The limited power of a single transistor means that the target application requires a combination of various transistors. The market also calls for amplifier systems with different frequencies and power classes. We developed the TruAccelerate platform to cater for these requirements as effectively as possible using a similar system architecture.
PDF - 3 MB
Solid-state power amplifier system for particle accelerators featuring a unique hot-swap function capable of withstanding full back-reflection
This white paper introduces hot-swap technology that enables individual failed power amplifier modules to be replaced during operation, while meeting ambitious reflection requirements. Particular attention must be paid to the architecture of the combiner and the certified module insulation.
PDF - 3 MB
Meantime Between Failures (MTBF) and Annual Failure Rate (AFR) from a large-scale installation of solid-state power amplifiers
The availability of particle accelerators is a critical factor. The complexity of the technology means that identifying individual faults and deriving a reliable failure estimate requires an accurate availability rating.
PDF - 715 KB
It depends on the form: bipolar sputtering
Two characteristics of bipolar power supplies are presented in this article: (i) a wide pulse frequency range of up to 100 kHz and (ii) an additional brake time between the positive and negative half-wave of the square wave shape of electricity and voltage.
PDF - 941 KB
Sine or square wave
Since the introduction of dual magnetron sputtering (DMS) for highly insulating layers, it is possible to choose between a square wave pulse and sine wave power supply.
PDF - 567 KB
Auto Frequency Tuning
A countermeasure against rapid fluctuations in the plasma’s impedance range is automatic frequency tuning, during which the RF generator sets its fundamental oscillation to a frequency value with better adaptation within a time frame of less than one millisecond.
PDF - 2 MB
New pulsed DC technology
Direct current and pulsed direct current sputtering are some of the most frequently used sputtering technologies in the industrial sector. The introduction of pulsed direct current technology facilitated the mass production of coatings made of non-conductive compounds created by reactive magnetron sputtering.
PDF - 1 MB
Voltage controlled transition mode
Reactive sputtering is a largely successful method used in modern industry to create insulating coatings and hard coatings. In comparison with evaporation, sputtering offers the benefits of ion-assisted coating which makes it attractive for the industry despite considerable system and electricity costs.
PDF - 2 MB
Arc management
The creation of arcs during MF magnetron sputtering: A well-known problem during reactive sputtering is arc formation at the cathodes.
PDF - 864 KB
LDMOS
This paper explores the effects of performance-combining structures on the RF and thermal performance of RF high power amplifiers under incongruent conditions. 
PDF - 425 KB
HiPIMS - new possibilities for the industry
High Power Impulse Magnetron Sputtering (HIPIMS) is the latest PVD process (Physical Vapor Deposition) available for the industry.
PDF - 1 MB
PEALD technology, radio frequency signal generator and matching networks
Atomic Layer Deposition (ALD) is a procedure during which a number of thin layer materials are deposited from a vapour phase. A very thin film is built up out of atomic layers in several coating cycles.
PDF - 3 MB
Application of pulsed DC sputtering
One of the most interesting resorption materials for solar cells are copper-indium-selenide (CIS) based materials whose properties can be changed by replacing part of the indium with gallium to make Cu(In,Ga)Se2, known as CIGS.
PDF - 2 MB
Precision in processing
Continuous improvements of semiconductor processes are required to ensure a continuous reduction in size. This in turn requires RF generators that have an even higher signal quality in relation to output power and time resolution.
PDF - 712 KB
DC power for resistance heating in precise MOCVD processes
Metal Organic Chemical Vapor Phase Deposition (MOCVD) is a highly complex procedure for the growth of crystalline layers. MOCVD is implemented for the manufacture of light-emitting diodes (LEDs), lasers, transistors, solar cells and other electronic and opto-electronic components, for example, and is the key technology for future markets with high growth potential. TruHeat DC 3000 is the perfect candidate for these applications.
PDF - 1 MB
Inductive heating - applications and challenges for the semi-conductor industry
TRUMPF Hüttinger offers a wide range of process power supply systems, outer circles, inductors and accessories which are already being used successfully for crystal-growing and epitaxy processes by a variety of key players in the SiC and GaN industry.
- 0 B
Innovative voltage regulation for C&I storage systems that enables a seamless transition between the power connection and stand-alone operation
When a battery storage system is capable of establishing and operating local grids in addition to mains operation, it presents significant advantages to the operator in terms of enhanced resilience, robustness and security. In particular, this includes the seamless continued operation of its systems in the event of a supply network failure.
PDF - 1 MB
DC coupling: the efficient path
Thanks to the decreasing costs of energy storage, PV-coupled storage applications are becoming increasingly attractive for a wide range of applications.
PDF - 343 KB
Single-level three-point inverter
The cost and energy efficiency of AC-coupled battery systems for high voltages depends on the performance electronics required for connecting the battery to the power supply system. This article discusses the requirements and dependencies for a single-level approach which can save costs and increase system efficiency.
PDF - 1 MB
Highly efficient and innovative GaN generator in the 2.45-GHz-ISM band for high-tech microwave applications
To date, the main obstacle and greatest disadvantage in the industrialisation of microwave processes was the lack of “options”. Up to now, only mechanically mobile components such as rotating plates, agitators, etc. were available to influence the homogeneity of the heating process and to facilitate a targeted temperature distribution and a reproducible heating process.
Contact
TRUMPF Hüttinger
Telephone +49 761 89710
Fax +49 761 89711150
Email
Kontakt bei TRUMPF Hüttinger:

Weltweit

Service & contact